Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods

ABSTRACT

Solid state transducer devices having integrated electrostatic discharge protection and associated systems and methods are disclosed herein. In one embodiment, a solid state transducer device includes a solid state emitter, and an electrostatic discharge device carried by the solid state emitter. In some embodiments, the electrostatic discharge device and the solid state emitter share a common first contact and a common second contact. In further embodiments, the solid state lighting device and the electrostatic discharge device share a common epitaxial substrate. In still further embodiments, the electrostatic discharge device is positioned between the solid state lighting device and a support substrate.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.17/539,528, filed Dec. 1, 2021, which is a continuation of U.S.application Ser. No. 16/800,287, filed Feb. 25, 2020, now U.S. Pat. No.11,195,876, which is a continuation of U.S. application Ser. No.16/440,720, filed Jun. 13, 2019, now U.S. Pat. No. 10,615,221; which isa continuation of U.S. application Ser. No. 15/976,805, filed May 10,2018, now U.S. Pat. No. 10,361,245; which is a continuation of U.S.application Ser. No. 15/187,022, filed Jun. 20, 2016, now U.S. Pat. No.9,978,807; which is a division of U.S. application Ser. No. 14/460,297,filed Aug. 14, 2014, now U.S. Pat. No. 9,373,661; which is a division ofU.S. application Ser. No. 13/223,098, filed Aug. 31, 2011, now U.S. Pat.No. 8,809,897; each of which is incorporated herein by reference in itsentirety.

TECHNICAL FIELD

The present technology is directed generally to solid state transducerdevices including devices having integrated electrostatic dischargeprotection, and associated systems and methods.

BACKGROUND

Solid state lighting (“SSL”) devices are used in a wide variety ofproducts and applications. For example, mobile phones, personal digitalassistants (“PDAs”), digital cameras, MP3 players, and other portableelectronic devices utilize SSL devices for backlighting. SSL devices arealso used for signage, indoor lighting, outdoor lighting, and othertypes of general illumination. SSL devices generally use light emittingdiodes (“LEDs”), organic light emitting diodes (“OLEDs”), and/or polymerlight emitting diodes (“PLEDs”) as sources of illumination, rather thanelectrical filaments, plasma, or gas. FIG. 1 is a schematiccross-sectional diagram of a conventional indium-gallium nitride (InGaN)LED 10 including a substrate material 12 (e.g., silicon), N-type galliumnitride (GaN) 14, GaN/InGaN multiple quantum wells (“MQWs”) 16, andP-type GaN 18. The LED 10 also includes a first contact 20 on the P-typeGaN 18 and a second contact 22 on the N-type GaN 14. Duringmanufacturing, the N-type GaN 14, the GaN/InGaN MQWs 16, and the P-typeGaN 18 are formed on the substrate material 12 via metal organicchemical vapor deposition (“MOCVD”), molecular beam epitaxy (“MBE”),liquid phase epitaxy (“LPE”), hydride vapor phase epitaxy (“HVPE”),and/or other epitaxial growth techniques, each of which is typicallyperformed at elevated temperatures.

One aspect of the LED 10 shown in FIG. 1 is that an electrostaticdischarge (“ESD”) event can cause catastrophic damage to the LED 10, andrender the LED 10 inoperable. Accordingly, it is desirable to reduce theeffects of ESD events. However, conventional approaches for mitigatingthe effects of ESD typically include connecting a protection diode tothe SSL device, which requires additional connection steps and cancompromise the electrical integrity of the resulting structure.Accordingly, there remains a need for reliably and cost-effectivelymanufacturing LEDs with suitable protection against ESD.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a portion of a light emitting diodeconfigured in accordance with the prior art.

FIG. 2 is a cross-sectional view of an SSL device having anelectrostatic discharge device, configured and integrated in accordancewith embodiments of the presently disclosed technology.

FIGS. 3A-3G are cross-sectional views of a portion of a microelectronicsubstrate undergoing a process of forming an SSL device and anassociated electrostatic discharge device in accordance with embodimentsof the presently disclosed technology.

FIG. 4 is a cross-sectional view of an SSL device having anelectrostatic discharge device configured and integrated in accordancewith embodiments of the presently disclosed technology.

FIGS. 5A and 5B are cross-sectional views of the SSL device of FIG. 4during operation in accordance with embodiments of the presentlydisclosed technology.

DETAILED DESCRIPTION

Specific details of several embodiments of representative SST devicesand associated methods of manufacturing SST devices are described below.The term “SST” generally refers to solid-state transducer devices thatinclude a semiconductor material as the active medium to convertelectrical energy into electromagnetic radiation in the visible,ultraviolet, infrared, and/or other spectra. For example, SSTs includesolid-state light emitters (e.g., LEDs, laser diodes, etc.) and/or othersources of emission other than electrical filaments, plasmas, or gases.In other embodiments, SSTs can include solid-state devices that convertelectromagnetic radiation into electricity. The term solid state emitter(“SSE”) generally refers to the solid state components or light emittingstructures that convert electrical energy into electromagnetic radiationin the visible, ultraviolet, infrared, and/or other spectra. SSEsinclude semiconductor LEDs, PLEDs, OLEDs, and/or other types of solidstate devices that convert electrical energy into electromagneticradiation in a desired spectrum. Particular examples of the presentlydisclosed technology are described below in the context of solid statelighting (SSL) devices which represent a particular type of SST device.In other embodiments, the disclosed technology is applied to other SSTdevices. A person skilled in the relevant art will understand that thenew, presently disclosed technology may have additional embodiments andthat this technology may be practiced without several of the details ofthe embodiments described below with reference to FIGS. 2-5B.

In particular embodiments, an electrostatic discharge device is formedon a solid state emitter without pre-forming the electrostatic dischargedevice as a stand-alone unit, and then electrically and/or physicallyattaching the electrostatic discharge device as a unit to the SSE.Accordingly, forming an electrostatic discharge device on a solid stateemitter can include forming the electrostatic discharge device directlyon a semiconductor surface of the solid state emitter, or on anintermediate surface, for example, a conductive and/or reflectivesurface. In particular embodiments, both the solid state emitter and theelectrostatic discharge device are formed from the same epitaxialsubstrate. In other embodiments, the solid state emitter can be formedon an epitaxial substrate, and the electrostatic discharge device can beformed on the solid state emitter, with the epitaxial substrate removedbefore the resulting SSL device is completed for final use.

FIG. 2 is a cross-sectional view of an SSL device 200 configured inaccordance with embodiments of the presently disclosed technology. TheSSL device 200 can include an SSE 202 mounted to or otherwise carried bya support substrate 230. The SSL device 200 further includes anelectrostatic discharge device 250 carried by the SSE 202. As will bedescribed further below, the electrostatic discharge device 250 can bemanufactured to be integral with the SSL device 200 (and in particular,the SSE 202) e.g., to improve reliability and/or manufacturability.

The SSE 202 can include a first semiconductor material 204, a secondsemiconductor material 208, and an active region 206 between the firstand second semiconductor materials 204, 208. In one embodiment, thefirst semiconductor material 204 is a P-type gallium nitride (“GaN”)material, the active region 206 is an indium gallium nitride (“InGaN”)material, and the second semiconductor material 208 is an N-type GaNmaterial. In other embodiments, the semiconductor materials of the SSEstructure 202 can include at least one of gallium arsenide (“GaAs”),aluminum gallium arsenide (“AlGaAs”), gallium arsenide phosphide(“GaAsP”), aluminum gallium indium phosphide (AlGaInP), gallium(III)phosphide (“GaP”), zinc selenide (“ZnSe”), boron nitride (“BN”),aluminum nitride (“AN”), aluminum gallium nitride (“AlGaN”), aluminumgallium indium nitride (“AlGaInN”), and/or another suitablesemiconductor material.

The illustrated electrostatic discharge device 250 includes an epitaxialsubstrate 210 (e.g., an epitaxial growth substrate) and a semiconductormaterial 216 (e.g., a buffer material). The electrostatic dischargedevice 250 further includes a first contact 246 (e.g., formed from afirst conductive material) electrically connected to a via 240 thatextends through the electrostatic discharge device 250 and a portion ofthe SSE 202. The first contact 246 electrically contacts a conductive(and typically reflective) material 220 below the active region 206 andcan provide an external terminal for interfacing with a power source orsink. Accordingly, the conductive material 220 operates as a P-contact.The first contact 246 is electrically insulated in the via 240 from thesurrounding semiconductor material 216 and portions of the SSE 202 by aninsulator 242. The illustrated electrostatic discharge device 250further includes a second contact 248 (e.g., formed from a secondconductive material) that doubles as an N-contact for the SSE 202.Accordingly, the second contact 248 can extend over an upper surface 209of the SSE 202 e.g., in contact with the N-type material 208. The secondcontact 248 is electrically insulated from the semiconductor material216 by a second insulator 244, and is transparent to allow radiation(e.g., visible light) to pass out through the SSL device 200 from theactive region 206. In the illustrated embodiment, the first contact 246and the second contact 248 are shared by the SSE 202 and theelectrostatic discharge device 250. More specifically, the first contact246 is electrically coupled to both the first semiconductor layer 204 ofthe SSE 202 and the epitaxial substrate 210 of the electrostaticdischarge device 250. The second contact 248 is electrically coupled toboth the second semiconductor layer 208 of the SSE 202 and the epitaxialsubstrate 210 of the electrostatic discharge device 250. Accordingly,the electrostatic discharge device 250 is connected in parallel with theSSE 202. The conductive materials forming the first contact 246, thesecond contact 248 and an electrical path though the via 240 can be thesame or different, depending upon the particular embodiment. Forexample, the via 240 can include a third conductive material that is thesame as the first conductive material, though it may be deposited in aseparate step.

The SSL device 200 can be coupled to a power source 270 that is in turncoupled to a controller 280. The power source 270 provides electricalcurrent to the SSL device 200, under the direction of the controller280.

During normal operation, as current flows from the first semiconductormaterial 204 to the second semiconductor material 208, charge-carriersflow from the second semiconductor material 208 toward the firstsemiconductor material 204 and cause the active region 206 to emitradiation. The radiation is reflected outwardly by the conductive,reflective material 220. The electrostatic discharge device 250 providesan additional path for current to flow between the first contact 246 andthe second contact 248. In particular, the epitaxial substrate 210between the first contact 246 and the second contact 248 can form adiode in parallel with the SSE 202, but with the opposite polarity.During normal operating conditions, the bias of the epitaxial substrate210 prevents current flow through it from the first contact 246 to thesecond contact 248, forcing the current to pass through the SSE 202. Ifa significant reverse voltage is placed across the contacts 246, 248,(e.g., during an electrostatic discharge event), the epitaxial substrate210 becomes highly conductive in the reverse direction, allowing thereverse current to flow through it, thus protecting the SSL device fromthe reverse current flow.

The present technology further includes methods of manufacturing SSLdevices. For example, one method of forming a SSL device can includeforming an SSE and an electrostatic discharge device from a commonepitaxial substrate. Representative steps for such a process aredescribed in further detail below with reference to FIGS. 3A-3G.

FIGS. 3A-3G are partially schematic, cross-sectional views of a portionof a microelectronic substrate 300 undergoing a process of forming anembodiment of the SSL device 200 described above, in accordance withembodiments of the technology. FIG. 3A shows the substrate 300 after asemiconductor material 216 (e.g., a buffer material) has been disposedon the epitaxial substrate 210 (e.g., a growth substrate). The epitaxialsubstrate 210 can be silicon (e.g., Si (1,0,0) or Si (1,1,1)), GaAs,silicon carbide (SiC), polyaluminum nitride (“pAlN”), engineeredsubstrates with silicon epitaxial surfaces (e.g., silicon onpolyaluminum nitride), and/or other suitable materials. Thesemiconductor material 216 can be the same material as the epitaxialsubstrate 210 or a separate material bonded to the epitaxial substrate210. For example, the epitaxial substrate 210 can be pAlN and thesemiconductor material 216 can be Si (1,1,1). In any of theseembodiments, the SSE 202 is formed on the semiconductor material 216.

The SSE 202 includes the first semiconductor material 204, the activeregion 206, and the second semiconductor material 208, which can besequentially deposited or otherwise formed using chemical vapordeposition (“CVD”), physical vapor deposition (“PVD”), atomic layerdeposition (“ALD”), plating, or other techniques known in thesemiconductor fabrication arts. In the embodiment shown in FIG. 3A, thesecond semiconductor material 208 is grown or formed on thesemiconductor material 216, the active region 206 is grown or formed onthe second semiconductor material 208, and the first semiconductormaterial 204 is grown or formed on the active region 206. In oneembodiment, N-type GaN (as described above with reference to FIG. 2 ) ispositioned proximate to the epitaxial substrate 210, but in otherembodiments P-type GaN is positioned proximate to the epitaxialsubstrate 210. In other embodiments, the SSE 202 can include additionalbuffer materials, stress control materials, or other materials, and thematerials can have other arrangements known in the art.

In the embodiment shown in FIG. 3A, a conductive, reflective material220 a is formed over the first semiconductor material 204. Theconductive, reflective material 220 a can be silver (Ag), gold (Au),gold-tin (AuSn), silver-tin (AgSn), copper (Cu), aluminum (Al), or anyother suitable material that can provide electrical contact and reflectlight emitted from the active region 206 back through the firstsemiconductor material 204, the active region 206, and the secondsemiconductor material 208, as described above with reference to FIG. 2. The conductive, reflective material 220 a can be selected based on itsthermal conductivity, electrical conductivity, and/or the color of lightit reflects. For example, silver generally does not alter the color ofthe reflected light. Gold, copper, or other colored reflective materialscan affect the color of the light and can accordingly be selected toproduce a desired color for the light emitted by the SSE 202. Theconductive, reflective material 220 a can be deposited directly on thefirst semiconductor material 204, or a transparent electricallyconductive material 221 (shown in broken lines) can be disposed betweenthe first semiconductor material 204 and the reflective material 220 a.The transparent electrically-conductive material 221 can be indium tinoxide (ITO) or any other suitable material that is transparent,electrically conductive, and adheres or bonds the reflective material220 a to the first semiconductor material 204. The transparent,electrically conductive material 221 and the reflective material 220 acan be deposited using CVD, PVD, ALD, plating, or other techniques knownin the semiconductor fabrication arts. The transparent, electricallyconductive material 221 and/or the reflective material 220 a canaccordingly form a conductive structure 222 adjacent to (e.g., incontact with) the SSE 202.

FIG. 3B illustrates an embodiment of a support substrate 230 beingbonded or otherwise attached to the SSE 202. The support substrate 230can include an optional backside reflective material 220 b. The backsidereflective material 220 b is bonded or otherwise attached to thereflective material 220 a using an elevated pressure and/or elevatedtemperature process.

FIG. 3C shows an embodiment in which the bonded reflective materials 220a, 220 b (FIG. 3B) form a combined reflective material 220. Theepitaxial substrate 210 has also been thinned, e.g., by backgrinding. Atthis point, the remaining epitaxial substrate 210 can be implanted witha p-type dopant (e.g., boron) to form a p-n junction with the underlyingsilicon or other semiconductor material 216. In another embodiment, thesubstrate 210 can be doped in a prior step. In either embodiment,because the semiconductor material 216 typically includes buffer layersto facilitate forming the SSE 202, and because the buffer layerstypically include undoped, large-bandgap semiconductor layers (e.g.,GaN, AlGaN or AlN) the p-n junction will be electrically isolated fromthe epitaxial junction that forms the SSE 202.

FIG. 3D illustrates the microelectronic substrate 300 afterbackgrinding, after the substrate 300 has been inverted, and after theepitaxial substrate 210 has been doped. Most of the semiconductormaterial 216 and the epitaxial substrate 210 have been removed usinggrinding, etching, and/or other processes to expose an outer surface 209of the second semiconductor material 208 or other portions of the SSE202. A portion of the semiconductor material 216 and the epitaxialsubstrate 210 remain on the SSE 202 to form the electrostatic dischargedevice 250. This is one manner in which the electrostatic dischargedevice 250 can be made integral with the SSE 202 and the SSL 300. Infurther embodiments, the same or similar techniques can be used to formmultiple electrostatic discharge devices 250 integral with the SSE 202e.g., after the surface 209 has been selectively etched or otherwisetreated.

FIG. 3E illustrates the microelectronic substrate 300 after a via 240has been formed through the electrostatic discharge device 250 and aportion of the SSE 202. The via 240 can be formed by drilling, etching,or other techniques known in the semiconductor fabrication arts. The via240 includes sidewalls 241 and provides access to the reflectivematerial 220 which is in electrical communication with the firstsemiconductor material 204. In other embodiments, the via 240 providesaccess to the conductive material 221, which is in direct electricalcontact with the first semiconductor material 204. FIG. 3F shows themicroelectronic substrate 300 after a first insulator 242 has beendeposited or formed in the via 240 and the second insulator 244 has beendeposited or formed on a lateral sidewall of the electrostatic dischargedevice 250.

FIG. 3G shows the microelectronic substrate 300 after conductivematerial has been deposited or formed in the via 240 inward of the firstinsulator 242, and the first contact 246 has been formed. The firstcontact 246 can comprise silver (Ag), gold (Au), gold-tin (AuSn),silver-tin (AgSn), copper (Cu), aluminum (Al), and/or other conductivematerials. The first contact 246 is insulated from the semiconductormaterial 216 and the SSE 202 by the first insulator 242. The secondcontact 248 has been deposited or otherwise disposed or formed on theouter surface 209 of the SSE 202 and on the epitaxial substrate 210 ofthe electrostatic discharge device 250. The second insulator 244insulates the second contact 248 from the semiconductor material 216.

In selected embodiments, a lens (not shown in FIG. 3G) can be formedover the SSE 202. The lens can include a light-transmissive materialmade from silicone, polymethylmethacrylate (PMMA), resin, or othermaterials with suitable properties for transmitting the radiationemitted by the SSE 202. The lens can be positioned over the SSE 202 suchthat light emitted by the SSE 202 and reflected by the reflectivematerial 220 passes through the lens. The lens can include variousoptical features, such as a curved shape, to diffract or otherwisechange the direction of light emitted by the SSE 202 as it exits thelens.

Embodiments of the integral electrostatic discharge device 250 offersseveral advantages over traditional systems. For example, because inparticular embodiments the electrostatic discharge device 250 iscomprised of materials (e.g., the epitaxial substrate 210 and thesemiconductor material 216) that are also used to form the SSE 202, thematerial cost can be less than that of separately-formed electrostaticdevices. Moreover, traditional systems having a separate electrostaticdischarge die require additional pick-and-place steps to place the dieproximate to the SSE 202. Still further, such traditional systemsrequire forming additional and/or separate electrical connections toconnect the electrostatic device to the SSE.

FIG. 4 is a cross-sectional view of an SSL device 400 having anelectrostatic discharge device 450 configured in accordance with furtherembodiments of the present technology. The SSL device 400 can haveseveral features generally similar to those described above withreference to FIGS. 2-3G. For example, the SSL device 400 can include anSSE 202 that in turn includes a first semiconductor material 204 (e.g.,a p-type material), a second semiconductor material 208 (e.g., an n-typematerial), and an active region 206 between the first and secondsemiconductor materials 204, 208. The SSL device 400 can further includea reflective material 220 between the support substrate 230 and the SSE202. Typically, the SSE 202 and the reflective/conductive material 220are formed on an epitaxial substrate 210 (shown in dashed lines in FIG.4 ). The structures that form the electrostatic discharge device 450 andthat electrically connect the electrostatic discharge device 450 to theSSE can be formed on the SSE 202 while the SSE 202 is supported by theepitaxial substrate 210. The epitaxial substrate 210 can then beremoved.

In the illustrated embodiment, the electrostatic discharge device 450 isfabricated on the SSE 202, and both the SSE 202 and the electrostaticdischarge device 450 are carried by the substrate 230, with theelectrostatic discharge device 450 positioned between the substrate 230and the SSE 202. Typically, the fabrication steps for forming theelectrostatic discharge device 450 are performed while the SSE 202 isinverted from the orientation shown in FIG. 4 , and before the substrate230 is attached. The electrostatic discharge device 450 can include aplurality of electrostatic junctions 460 (which may also be referred toas electrostatic discharge junctions, identified individually asfirst-third junctions 460 a-460 c). Each electrostatic junction 460 caninclude a first conductive material 454 (identified individually byreference numbers 454 a-454 c), an intermediate material 456 (identifiedindividually by reference numbers 456 a-456 c), and a second conductivematerial 458 (identified individually by reference numbers 458 a-458 c).The materials can be disposed using any of a variety of suitabledeposition, masking, and/or etching processes. These materials can bedifferent than the materials forming the SSE 202 because they are notrequired to perform a light emitting function. As noted above and aswill be understood by one of ordinary skill in the art, these techniquescan be used to sequentially form the illustrated layers on the SSE 202while the SSL 400 is inverted relative to the orientation shown in FIG.4 . One or more insulating materials 461 electrically isolates thelayers from the first semiconductor material 204 and/or from the supportsubstrate 230.

The intermediate material 456 can have electrical properties differentthan those of the first conductive material 454 and the secondconductive material 458. In some embodiments, the intermediate material456 can be a semiconductor (e.g., amorphous silicon) or a metal. Thefirst conductive material 454 a of one junction (e.g., the firstjunction 460 a) is electrically coupled to the second conductivematerial 458 b of an adjacent junction (e.g., the second junction 460b). While the illustrated electrostatic discharge device 450 includesthree junctions 460 placed in series, in further embodiments more orfewer junctions 460 can be used. Furthermore, to obtain differentcurrent-handling capacities for the electrostatic discharge device 450,the junctions 460 can be altered in size, and/or multiple junctions 460can be arranged in parallel.

The electrostatic discharge device 450 can further include a firstcontact 448 positioned at a first via 449 and electrically connectedbetween one of the junctions 460 (e.g., to the first metal layer 454 cof the third junction 460 c), and to the second semiconductor material208. The electrostatic discharge device 450 additionally includes asecond contact 446 positioned at a second via 440 extending through theelectrostatic discharge device 450. The second contact 446 electricallycouples a junction 460 (e.g., the second metal layer 458 a of the firstjunction 460 a) to the reflective material 220 or, in furtherembodiments, to a separate conductive layer or to the firstsemiconductor material 204. The substrate 230 can be conductive so as toroute current to the second contact 446. An insulating material 461electrically isolates the first and second contacts 446, 448 fromadjacent structures.

In some embodiments, components of the electrostatic discharge device450 are deposited on the SSE 202 by PVD, ALD, plating, or othertechniques known in the semiconductor fabrication arts. The first andsecond vias 449 and 440 can be formed in the electrostatic dischargedevice 450 and/or the SSE 202 using the methods described above withreference to FIG. 3E. In a representative embodiment, the electrostaticdischarge device 450 is formed on the SSE 202 before the substrate 230is attached. In some embodiments, the electrostatic discharge device 450can be attached to the substrate and/or the SSE 202 by means of bondinglayers. In still further embodiments, the electrostatic discharge device450 can be positioned on a portion of an external surface of the SSE 202without the substrate 230.

FIGS. 5A and 5B are cross-sectional views of the SSL device 400 of FIG.4 during operation in accordance with embodiments of the technology.During normal operation, as illustrated in FIG. 5A, current flows in thedirection of the arrows from the second contact 446 to the firstsemiconductor material 204, through the SSE 202 to the secondsemiconductor material 208 as described above, to the first contact 448.As illustrated in FIG. 5B, during an electrostatic discharge event, theSSL device 400 can be protected from reverse currents by providing apath for reverse current flow, illustrated by the arrows, through thejunctions 460. The reverse current can be directed through the substrate230, rather than through the SSE 202.

One feature of several of the embodiments described above is that thesolid state emitter and associated electrostatic discharge device can beformed so as to be integral. For example, the electrostatic dischargedevice can be formed from a portion of the same substrate on which thesolid state emitter components are formed, as described above withreference to FIGS. 2-3G. In the embodiments described with reference toFIGS. 4 and 5 , the same epitaxial substrate is not used for both thesolid state emitter and the electrostatic discharge device, but, thecomponents that form the electrostatic discharge device can be formed insitu on the solid state emitter. An advantage of the latter approach isthat the electrostatic discharge device can be formed so as to be on theside of the solid state emitter opposite from the path of light emittedby the solid state emitter. Accordingly, the presence of theelectrostatic discharge device does not interfere with the ability ofthe solid state emitter to emit light or other radiation.

In any of the foregoing embodiments, the integrally formed electrostaticdischarge device and solid state emitter can share integrally formedcontacts. In particular, the same contacts of the solid state lightingdevice provide electrical current to both the solid state emitter andthe electrostatic discharge device. The contacts can be the onlyexternally accessible active electrical contacts for both the solidstate emitter and the electrostatic discharge device. As a result, themanufacturer need not separately electrically connect the electrostaticdischarge device to the solid state emitter, but can instead form theelectrical contacts simultaneously with forming the electrostaticdischarge device itself. In any of these embodiments, a single substrateor support member can carry both the solid state emitter and theelectrostatic discharge device. The electrostatic discharge device isnot a pre-formed structure and is accordingly not attachable to orremovable from the solid state emitter as a unit, without damaging orrendering inoperable the solid state emitter. In addition, the solidstate emitter and the electrostatic discharge device are not separatelyaddressable. That is, electrical current provided to the solid stateemitter will also be provided to the electrostatic discharge device. Thesolid state emitter and the electrostatic discharge device areaccordingly formed as a single chip or die, rather than being formed astwo separate dies that may be electrically connected together in asingle package.

From the foregoing, it will be appreciated that specific embodiments ofthe technology have been described herein for purposes of illustration,but that various modifications may be made without deviating from thedisclosure. For example, some of the embodiments described above discussthe electrostatic discharge device as a diode. In other embodiments, theelectrostatic discharge device can include a different, non-linearcircuit element. The electrostatic discharge device can be constructedand connected to protect the SSE from large reverse voltages, asdiscussed above in particular embodiments. In other embodiments, theelectrostatic discharge device can be connected with a forward bias toprevent the SSE from large forward voltages. In still furtherembodiments, the SSE can be connected to both types of ESD devices, toprotect against both high forward and high reverse voltages.Additionally, in certain embodiments, there may be more or fewerelectrostatic discharge devices, or electrostatic junctions within anelectrostatic discharge device, for a particular SSL device.Furthermore, material choices for the SSE and substrates can vary indifferent embodiments of the disclosure. In certain embodiments, the ESDdevices can be used to protect solid state transducers other than thelight emitting transducers described above. Certain elements of oneembodiment may be combined with other embodiments, in addition to or inlieu of the elements of the other embodiments. Accordingly, thedisclosure can encompass other embodiments not expressly shown ordescribed herein.

I/We claim:
 1. A solid state transducer device, comprising: a solidstate emitter (SSE) including a first semiconductor layer, a secondsemiconductor layer, and an active layer between the first and secondsemiconductor layers; and a plurality of electrostatic discharge (ESD)junctions arranged in parallel and/or series between a first sharedcontact and a second shared contact, the first and second sharedcontacts being the only externally accessible active electrical contactsfor both the SSE and the plurality of ESD junctions.
 2. The solid statetransducer device of claim 1, further comprising a via extending throughat least the active layer of the SSE, wherein the via comprises aconductive material surrounded by an insulating material thatelectrically isolates the conductive material from the active layer,wherein the first shared contact includes the conductive material. 3.The solid state transducer device of claim 2, wherein the via extendsthrough a layer positioned between the plurality of ESD junctions andthe SSE to electrically isolate the plurality of ESD junctions from theSSE.
 4. The solid state transducer device of claim 2, wherein the viaelectrically connects an epitaxial layer of the plurality of ESDjunctions to a conductive reflective material coupled to the SSE.
 5. Thesolid state transducer device of claim 4, wherein the via extendsthrough the first and second semiconductor layers of the SSE and theepitaxial layer of the plurality of ESD junctions.
 6. The solid statetransducer device of claim 1, further comprising: a buffer layerpositioned between the plurality of ESD junctions and the SSE, whereinthe buffer layer includes a large-bandgap semiconductor material.
 7. Thesolid state transducer device of claim 1, wherein the secondsemiconductor layer of the SSE is electrically coupled to an ESDjunction of the plurality of ESD junctions.
 8. The solid statetransducer device of claim 1, further comprising a reflective layerpositioned between the SSE and the plurality of ESD junctions.
 9. Thesolid state transducer device of claim 8, further comprising: aninsulating layer positioned between the plurality of ESD junctions andthe reflective layer.
 10. The solid state transducer device of claim 1,further comprising: a support substrate coupled to the plurality of ESDjunctions at the second shared contact, the support substrate configuredto provide a path for electrical current flow during an ESD event. 11.The solid state transducer device of claim 1, wherein the plurality ofESD junctions are coupled with the SSE in parallel.
 12. The solid statetransducer device of claim 1, wherein the first shared contact isconfigured to couple with a power source that is further coupled to acontroller configured to direct the power source.
 13. A solid statetransducer device, comprising: a solid state emitter (SSE) formed on anepitaxial substrate; a plurality of electrostatic discharge (ESD)junctions arranged in parallel and/or series between a first sharedcontact and a second shared contact, the plurality of ESD junctionscarried by the SSE, wherein: the plurality of ESD junctions include aportion of the epitaxial substrate; and the first and second sharedcontacts are the only externally accessible active electrical contactsfor both the SSE and the plurality of ESD junctions.
 14. The solid statetransducer device of claim 13, further comprising: a buffer layerpositioned between the portion of the epitaxial substrate and the SSE.15. The solid state transducer device of claim 13, further comprising avia extending through the SSE and connecting to a conducting materialcoupled with a first surface of the SSE, wherein the first surface isopposite to a second surface of the SSE connected to the second sharedcontact.
 16. The solid state transducer device of claim 13, wherein theplurality of ESD junctions comprise a p-n junction formed in the portionof the epitaxial substrate.
 17. A solid state transducer device,comprising: a solid state emitter (SSE) including a first semiconductorlayer, a second semiconductor layer, and an active layer between thefirst and second semiconductor layers; a reflective material coupled tothe first semiconductor layer; and a plurality of electrostaticdischarge (ESD) junctions arranged in parallel and/or series between afirst shared contact and a second shared contact, the plurality of ESDjunctions on an opposite side of the reflective material from the SSE,wherein the first and second shared contacts are the only externallyaccessible active electrical contacts for both the SSE and the pluralityof ESD junctions.
 18. The solid state transducer device of claim 17,further comprising: a support substrate coupled to the plurality of ESDjunctions at the second shared contact, the support substrate configuredto provide a path for electrical current flow during an ESD event. 19.The solid state transducer device of claim 17, further comprising a viaextending through the first semiconductor layer and the active layer ofthe SSE, and coupling the second semiconductor layer of the SSE with anESD junction of the plurality of ESD junctions at the first sharedcontact.
 20. The solid state transducer device of claim 17, wherein theplurality of ESD junctions each have a first conductive material, asecond conductive material, and an intermediate material separating thefirst and second conductive materials.